Seventh International Workshop Program
ARAMIS A.S.B.L. - UCL-DICE
Université Catholique de Louvain
September 8-10, 1997
8.3 " A Method to Extend the Validity of Quasi-Static SOI MOSFET Models ",L. F. Ferreira , D. Flandre , P. G. A. Jespers - Laboratoire de Microélectronique - UCL, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium
Abstract - This paper describes a
method to model thin-film fully-depleted (FD) silicon-on-insulator (SOI)
MOSFETs at frequencies where the quasi-static model is no longer valid.
The method consists in considering a cascade of several elementary MOSFET
transistors or sections and applying the quasi-static analysis to each
section. Important second-order effects such as mobility degradation and
velocity saturation are considered in each individual section. Two different
approaches to choose the dimensions of each section are analyzed. This
technique is compared to a complete quasi-static analysis and results are
discussed. Also, scattering parameters measurements are presented.
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